SSLCHINA & IFWS2019丨衬底、外延及生长装备（SiC 和GaN）技术论坛即将召开

P201：衬底、外延及生长装备（SiC 和GaN）/ The Technology in Substrate, Epitaxy and Wafer Growth Equipment (SiC & GaN)

时间：2019年11月26日下午14:00-17:30

地点：深圳会展中心•五层菊花厅

Time: Nov 26^th, 2019 Afternoon 14:00-17:30

Location: Shenzhen Convention and Exhibition Center • 5th Floor Rose Hall 1

主持人

Moderator

沈波/ SHEN Bo

北京大学物理学院教授, 理学部副主任/Professor & Deputy Director, Division of Sciences, Peking University

徐现刚/XU Xiangang

山东大学教授，晶体材料国家重点实验室副主任/ Professor & Deputy Director of State Key Laboratory of Crystal Material of Shandong University 

Synchrotron x-ray diffraction-based visualization of lattice-plane tilting of a GaN substrate and epitaxial film

坂田修身    日本电力中央研究所教授

Osami SAKATA    National Institute for Materials Science (NIMS)，Japan

In situ coherent x-ray studies of surface dynamics during OMVPE of GaN

鞠光旭    美国亚利桑那州立大学助理研究员教授

Guangxu JU      Assistant Research Professor of Arizona State University, USA

Modeling of SiC crystal growth and epitaxy and simulation of GaN Metal Organic Vapor Deposition

Andrey SMIRNOV    俄罗斯STR Group, Inc.资深研发工程师

Andrey SMIRNOV    Senior Research Engineer of STR Group, Inc., Russia

The effect of n-p electrodes upon the p-type conductivity of B0.375GaN/B0.45GaN QW/QB edge emitting laser diode grown over sapphire substrate

Mussaab I. NIASS    郑州大学

Mussaab I. NIASS    Zhengzhou University

INDUSTRY4.0 as A Major Opportunity for Electronics Processes and Products

Guido COLOMBO    德国ORCHESTRA总裁

Guido COLOMBO    President & CEO of ORCHESTRA, Germany

茶歇/Coffee Break

Interrelationship Between Equipment and PVT Crystal Growth in Silicon Carbide 

Larry B. Rowland    美国Aymont Technology Inc总裁

Larry B. Rowland    CEO of Aymont Technology Inc., USA

Advanced Chemical Concentration Control for Fabrication of Devices Using SiC

Ismail I. KASHKOUSH    美国NAURA-Akrion, Inc.首席技术官

Ismail I. KASHKOUSH    Chief Technology Officer (CTO) of NAURA-Akrion, Inc., USA

The step growth mechanism for 4H-SiC with Improved Single Polytypes

林伟    厦门大学副教授

LIN Wei    Associate Professor of Xiamen University, China

Investigation of Defect Levels of Al/Ti 4H-SiC Schottky Structures by

Deep Level Transient Spectroscopy

何亚伟    中科院半导体所

HE Yawei    Institute of Semiconductors, Chinese Academy of Sciences

注：详细会议日程以现场实际为准

四、参会报名

张女士

M: 13681329411 

E: zhangww@china-led.net 

贾 先生 
       M: 18310277858　

E: jiaxl@china-led.net

许 先生 
       M: 13466648667 

E: xujh@china-led.net