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目录



                季刊 2019年第2期    2019年6月9日出版                                   Contents
                Quarterly 2019 - Issue 2              9 Jun 2019





                      技术Technology

                16    InGaAs HEMT和硅CMOS集成用于毫米波通信
                      Targeting millimetre-wave communications with InGaAs HEMTs and
                      silicon CMOS
                      - Sachin Yadav, Sang Xuan Nguyen, Fayyaz Singaporewala, Kenneth Lee，Eugene Fitzgerald, Xiao Gong,
                                  新加坡-麻省理工学院低能电子系统研究与技术联盟

                21    开发高效、可靠的 UV LED
                      Developing efficient, reliable UV LEDs
                      - Neysha Lobo Ploch, UV PHOTONICS和费迪南德-布劳恩研究所
                        Michael Kneissl, 柏林工业大学和费迪南德-布劳恩研究所


                25    在玻璃上生长III-V族材料
                      Growing III-V on glass
                      - Ashok Chaudhari, SOLAR-TECTIC公司



                      科技前沿 Research Review

                29    新型纳米材料有望提升电池效率, 可在诸多可持续领域应用
                      The new nanomesh material promises to improve battery efficiency for
                      many sustainable applications

                30    运用 MOCVD 工艺生长 GaN VCSEL
                      Growing GaN VCSELs by MOCVD

                31    柔性纳米线激光器
                      Flexible nanowire lasers


                32    广告索引 Advertisement Index













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                  www.compoundsemiconductorchina.net                                          化合物半导体 2018年第4期          3
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