本期内容
2017年第四期
封面故事 Cover Story
三维技术: 
Ⅲ-V族的可行性进步
The third dimension: The logical step for Ⅲ-Vs
- Sanghyeon Kim,Seongkwang Kim, Hyung-Jun Kim,韩国科学技术部
业界动态 Industry
II-VI Epiworks: 规模扩大且更富胆识
II-VI Epiworks: Bigger and Bolder
Akash带金刚石基 GaN进入卫星通信领域
Akash drives GaN-on-diamond technology into the satellite communications
技术 Technology
MicroLED会是下一场显示革命吗?
Is the MicroLED the next display revolution?
- ERIC VIREY,Yole Développement
任意转移GaN: 从Nb2N上来释放GaN膜层
GaN on anything: Giving GaN freedom from Nb2N
- DAVID MEYER, BRIAN DOWNEY, D. SCOTT KATZER, MARIO ANCONA, SHAWN MACK, LAURA RUPPALT; 美国海军研究实验室
GaAs和GaN裸片组件和处理程序
GaAs and GaN die assembly and handling procedures
- Qorvo应用工程部门员工
科技前沿 Research Review
深紫外LED: 使用纳米图形增加光提取
Deep UV LEDs: Increasing extraction with nanoscale patterns
暴露GaN HEMT中的氧缺陷
Exposing oxygen defects in GaN HEMTs
LED的发光效率再创新高
New highs for the LED
编者话 Editorial
GaN技术为量产做准备
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