Gallium oxide MOSFETs: Why interfaces matter

格拉斯哥大学 伊恩·塞恩

From Price Bloodbath to AI Land Grab: Silicon Carbide's Do-or-Die Inflection Point in 2026

陆敏

EU approves �353 million for Element 3-5 SiC facility

Navitas CEO makes robust response to patent lawsuits

IVWorks reGaN tech enables World’s first 742 GHz GaN HEMT

AMEC to Invest RMB 3.5 Billion in Phase II of Lingang Industrial Base

Clas-SiC Wafer Fab gets £1.9m grant

BAE moves to next phase of DARPA GaN project

Aeluma to get $30m in CHIPS funding

Efficacious excitation aids n-type AlN

Agnitron Technology公司 FIKADU ALEMA、WILLIAM BRAND、VITALI SOUKHOVEEV、AARON FINE、ANDREI OSINSKY

The quiet war beneath our electronic chips

谢菲尔德大学SC LENNY KOH、卡迪夫大学PETER SMOWTON，两人均来自UKRI COMPOUND SEMICONDUCTOR HUB

A breakthrough for the bidirectional switch

中国科学技术大学 YUAN QIN、西安电子科技大学 MING XIAO、苏州能讯高能半导体（Enkris Semiconductor）KAI CHENG、香港大学 YUHAO ZHANG

AI accelerates power design

中国科学院上海微系统与信息技术研究所 LI ZHENG、XINHONG CHENG及其同事

Studies and Applications of Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) Analysis Technique in Semiconductor Chip Material/Defect characterization and Process Optimization (Part 1 of a Series)

华佑南，朱雷，赵弇斐，李晓旻，胜科纳米（苏州）股份有限公司；郭茹，方浩原，李雯琪，高聚宁，北京艾飞拓科技有限公司

A new benchmark for AlGaN-on-sapphire HEMTs

Terbium-dopedAlGaN eyes microLED displays

Precursor-modulated wells boost the efficiency of UVA LEDs

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