本期内容
2026年10/11月刊
封面故事 Cover Story
金刚石的双重功效
Double duty diamond
斯坦福大学的Jeong-Kyu Kim和Srabanti Chowdhury
编者话 Editorial
当AI为材料出题
When AI creates questions from material
陆敏
业界动态 Industry
射频GaN知识产权竞争加剧
RF GaN IP competition intensifies
Sivers投资3000万美元扩建苏格兰InP工厂
Sivers invests $30 million to expand Scottish InP fab
安森美推出“嵌入式功率平台”
Onsemi introduces‘Embedded Power Platform’
保时捷在高阶音响中引入GaN
Porsche introduces GaN for high end audio
NoMIS演示6.5kV SiC MOSFET
NoMIS demos 6.5 kV SiC MOSFET
Besxar完成首次太空飞行
Besxar completes first space flight
IQE宣布与Quintessent达成外延合作协议
IQE announces epitaxy agreement with Quintessent
技术 Technology
驱动氧化镓的商业化
Driving commercialisation of gallium oxide
Richard Stevenson采访NextGO Epi的两位联合创始人
面向未来无线通信的“三剑客”
The triumvirate for tomorrow’s wireless
KAIST的Jaeyong Jeong、Chan Jik Lee、Yoon-Je Suh、Nahyun Rheem、Bong Ho Kim、Joon Pyo Kim、Juhyuk Park和Sanghyeon Kim
用抗反射VCSEL变革激光雷达
Transforming lidar with anti-reflective VCSELs
Vertilite的Dong Liang、Cheng Zhang、Zhitong Luo、Shouzhu Niu、Pengfei Zhang、Song Liu、Huijie Li、Ryan Z. Rao、Li Zhao、Xiaochi Chen、Hanxuan Li和Yijie Huo
SiC: 
光子学的解决方案?
SiC: A solution for photonics?
CEA-LETI的Stéphanie Huet
飞行时间二次离子质谱(TOF-SIMS)分析技术在半导体芯片材料/缺陷表征及工艺制程优化中的研究与应用(连载二)
Studies and Applications of Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) Analysis Technique in Semiconductor Chip Material/Defect characterization and Process Optimization (Part 2 of a Series)
华佑南,朱雷,赵弇斐,李晓旻,胜科纳米(苏州)股份有限公司;郭茹,方浩原,李雯琪,高聚宁,北京艾飞拓科技有限公司
科技前沿 Research Review
革新短路可靠性
Revolutionising short-circuit reliability
V型缺陷提升绿色LED效率
V-defects boost green LEDs efficiency
更优的p-GaN欧姆接触
Superior p-GaN ohmic contacts
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