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目录
季刊 2018年第1期 2018年3月7日出版 Contents
Quarterly 2018 - Issue 1 7 Mar 2018
封面故事 Cover Story
10 异质结PIN二极管MMIC RF开关
Heterojunction PIN Diode MMIC RF Switches
- James J. Brogle,高级主任工程师,MACOM多应用市场事业部
业界动态 Industry
04 设立 SiC 标准
Setting the SiC standard
06 为 GaN 器件批量生产亮起绿灯
Green Light For GaN Devices
08 深紫外光 LED瞄准杀菌消毒应用
Ultraviolet LEDs take aim at disinfection
技术Technology
16 GaN的单片集成
The monolithic integration of GaN
27 首次亮相:p型SiC MOSFET
Making a debut: The p-type SiC MOSFET
- Junjie An,Masaki Namai,Mikiko Tanabe,Dai Okamoto等,筑波大学
30 GaN HEMT:衬底难题
GaN HEMTs: The substrate conundrum
- Mohammed Alomari,斯图加特微电子学院(IMS CHIPS)
科技前沿 Research Review
34 完善 GaN 肖特基势垒二极管
Perfecting the GaN Schottky barrier diode
35 UV LED 功率的提升
A hike in UV LED power
03 编者话Editorial
36 广告索引Advertisement Index
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Compound Semiconductor industry in China, introduce advanced global technology information and manufacturing
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圳和武汉设有联络处。www.actintl.com.hk
About ACT International Media Group
ACT International, established 1998, serves a wide range of high technology sectors in the high-growth China market. Through its range of
products -- including magazines and online publishing, training, conferences and events -- ACT delivers proven access to the China market
for international marketing companies and local enterprises. ACT's portfolio includes multiple technical magazine titles and related websites
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2 化合物半导体 2017年第3期 www.compoundsemiconductorchina.net