本期内容
2024年 10/11 月刊
封面故事 Cover Story
生产高质量六方氮化硼
Producing high-quality hexagonal BN
- BOHDAN SADOVYI, PETRO SADOVYI, SYLWESTER POROWSKI AND IZABELLA GRZEGORY,波兰科学院高压物理研究所; ANDRII NIKOLENKO ,乌克兰科学院半导体物理研究所
编者话 Editorial
SiC电力电子器件技术和产业化进展
The Progress of Silicon Carbide Power Devices Technology and Industrialization
- 陆敏
业界动态 Industry
总投资超200亿,长飞先进武汉基地主楼全面封顶
Total investment exceeds 20 billion, with the main building of YASC Wuhan base fully topped out.
世界先进与汉磊合作共建8吋SiC产线
World Advanced and Hanleigh join forces to build a 8-inch SiC production line.
Wolfspeed公布第四财季及2024财年业绩
Wolfspeed reports Q4 and full year results
新突破︱镓仁半导体成功研制氧化镓超薄6英寸衬底
New breakthrough | Gallium Ren Semiconductor successfully develops ultra-thin 6-inch gallium oxide substrates.
安森美发布升级版太阳能模块
Onsemi releases upgraded solar power modules
长城汽车“第三代半导体模组封测项目”完工
Great Wall Motor's "Third-Generation Semiconductor Module Packaging and Testing Project" is completed.
重庆三安项目衬底厂已点亮通线
The substrate factory of Chongqing San'an project has completed the lighting and commissioning of the production line.
宽禁带半导体国家工程研究中心专栏 WBS Column
氧化铪基铁电材料及其存储/存算芯片研究
Research on Hafnium Oxide-Based Ferroelectric Materials and Their Storage and Computing Chips
- 彭悦,武秋霞,张硕,马文轩,孙丽涛,杨守琛,马晓华,郝跃
科技前沿 Research Review
推进铟镓砷MOSFET
Advancing the InGaAs MOSFET
将铟磷PCSEL的功率推向新高
Taking the power of the InP PCSEL to new highs
PCSELs产生绿色发射
PCSELs produce green emission
技术 Technology
化合物半导体行业的未来将会怎样?
What does the future hold for the compound semiconductor industry?
- ALI JAFFAL, TAHA AYARI AND AYMEN GHORBEL,YOLE公司
GaN射频晶体管2.0?
GaN RF transistors 2.0?
- Stacia Keller和Umesh Mishra,加州大学圣巴巴拉分校
赋予氧化镓雪崩能力
Giving gallium oxide avalanche capability
- Feng Zhou1 ,Jiandong Ye1 和Yuhao Zhang2 (1.南京大学,2.弗吉尼亚理工大学)
突破功率极限
Pushing the power envelope
- Richard Stevenson,《CS》杂志
九峰山实验室专栏 JFS Laboratory Column
化合物半导体器件典型失效分析
Typical Failure Analysis of Compound Semiconductor Devices
- 刘旭博,王凯,胡轩宇,朱浩,李品欢,宋笠,方明胜,王若兰,肖科,杨冰,丁琪超
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